2N6727_15 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic Encapsulated Transistor

Elektronische Bauelemente
2N6727
-1.5 A, -50V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 General Purpose Switching Application
Collector


Base

Emitter
TO-92
G
H
J
A
D
B
K
E
CF
Emitter
Base
Collector
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal resistance, Junction to ambient
Junction, Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_J, T_STG
-50
-40
-5
-1.5
1
125
150, -55~150
Unit
V
V
V
A
W
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Voltage
Collector Output Capacitance
V_(BR)CBO
-50
-
-
V I_C= -1mA, I_E=0
V_(BR)CEO
-40
-
-
V I_C= -10mA, I_B=0
V_(BR)EBO
-5
-
-
V I_E= -1mA, I_C=0
I_CBO
-
-
-0.1
μA V_CB= -50V, I_E=0
I_CEO
-
-
-1
μA V_CE= -40V, I_E=0
I_EBO
-
-
-0.1
μA V_EB= -5V, I_C=0
h_{FE (1)}
50
-
250
V_CE= -1V, I_C= -1A
h_{FE (2)}
55
-
-
V_CE= -1V, I_C= -10mA
h_{FE (3)}
60
-
-
V_CE= -1V, I_C= -100mA
V_CE(sat)
-
-
-0.5
V I_C= -1A, I_B= -100mA
V_BE
-
-
-1.2
V V_CE= -1V, I_C= -1A
C_ob
-
-
30
pF V_CB= -10V, I_E=0A, f=1MHz
http://www.SeCoSGmbH.com/
13-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
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