2N6716 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

Elektronische Bauelemente
2N6716 / 2N6717 / 2N6718
1A , 100V
NPN Plastic Encapsulated Transistor
FEATURES
 High Voltage：V_CEO = 100V
 Gain of 20 @ I_C = 0.5A
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
Collector


Base

Emitter
TO-92
G
H
J
A
D
B
K
E
CF
Emitter
Base
Collector
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
2N6716
Collector to Base Voltage
2N6717
2N6718
2N6716
Collector to Emitter Voltage 2N6717
2N6718
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_D
T_J, T_STG
60
80
100
60
80
100
5
1
1
150, -55~150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Collector to Base
Breakdown Voltage
2N6716
2N6717
2N6718
Collector to Emitter
Breakdown Voltage
2N6716
2N6717
2N6718
Emitter to Base Breakdown Voltage
2N6716
Collector Cut-Off Current
2N6717
2N6718
2N6716
Emitter Cut-Off Current
2N6717
2N6718
DC Current Gain
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_{FE (1)}*
h_{FE (2)}*
h_{FE (3)}*
Min.
60
80
100
60
80
100
5
-
-
-
-
-
-
80
50
20
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-
-
-
-
1
1
-
250
-
Unit
Test Conditions
V I_C=100μA, I_E=0
V I_C=1mA, I_B=0
V I_E=1mA, I_C=0
V_CB=60V, I_E=0
μA V_CB=80V, I_E=0
V_CB=100V, I_E=0
μA V_EB=5V, I_C=0
V_CE=1V, I_C=50mA
V_CE=1V, I_C=250mA
V_CE=1V, I_C=500mA
http://www.SeCoSGmbH.com/
18-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
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