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| 2N6520 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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Elektronische Bauelemente
2N6520
-0.5 A, -350 V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of â-Câ specifies halogen & lead-free
FEATURES
ï¬ High voltage transistors
TO-92
Collector
ï¬ï
ï«ï
Base
ïªï
Emitter
G
H
J
A
D
B
K
E
CF
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATING
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal resistance, junction to ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
-350
-350
-5
-0.5
0.625
200
150, -55~150
UNIT
V
V
V
A
W
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL MIN TYP MAX UNIT
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
V(BR)CBO
-350
-
V(BR)CEO *
-350
-
V(BR)EBO
-5
-
ICBO
-
-
IEBO
-
-
20
-
-
V
-
V
-
V
-50
nA
-50
nA
-
30
-
-
DC Current Gain
hFE *
30
-
200
20
-
200
15
-
-
-
-
-0.3
Collector to Emitter Saturation Voltage
-
VCE(sat) *
-
-
-0.35
V
-
-0.5
-
-
-1.0
-
-
-0.75
Base to Emitter Saturation Voltage
VBE(sat) *
-
-
-
-0.85
V
-
-0.9
Base to Emitter voltage
VBE(on) *
-
Collector-Base Capacitance
Ccb
-
Emitter-Base Capacitance
Ceb
-
Transition Frequency
fT *
40
*Pulse testï¼Pulse Width ⦠300 μs, Duty Cycle ⦠2.0%.
-
-2
V
-
6
pF
-
80
pF
-
200
MHz
TEST CONDITION
IC= -100μA, IE = 0A
IC= -1mA, IB = 0A
IE= -10μA, IC = 0A
VCB= -250V, IE = 0 A
VEB= -4V, IC =0 mA
VCE= -10V, IC= -1mA
VCE= -10V, IC= -10mA
VCE= -10V, IC= -30mA
VCE= -10V, IC= -50mA
VCE= -10V, IC= -100mA
IC= -10mA, IB= -1mA
IC= -20mA, IB= -2mA
IC= -30mA, IB= -3mA
IC= -50mA, IB= -5mA
IC= -10mA, IB= -1mA
IC= -20mA, IB= -2mA
IC= -30mA, IB= -3mA
VCE= -10V, IC= -100mA
VCB = -20V, IE = 0A, f=1MHz
VEB = -0.5V, IC = 0A, f=1MHz
VCE = -20V, IC = -10mA, f=20MHz
http://www.SeCoSGmbH.com/
02-Sep-2010 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 2
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