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| 2N5832_15 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic Encapsulated Transistor | |||
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Elektronische Bauelemente
2N5832
0.6 A, 160 V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of â-Câ specifies halogen & lead-free
FEATURES
ï¬ General Purpose Switching Transistor
TO-92
G
H
Collector
ï¬ï
ï«ï
Base
ïªï
Emitter
J
A
D
B
K
E
CF
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal resistance, junction to ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
160
140
5
0.6
625
200
150, -55~150
Unit
V
V
V
A
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test Condition
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Base to Emitter Voltage
Collector output capacitance
Transition frequency
.
V(BR)CBO
160
-
-
V IC= 0.1mA, IE = 0A
V(BR)CEO
140
-
-
V IC= 1mA, IB = 0A
V(BR)EBO
5
-
-
V IE= 0.01mA, IC = 0A
ICBO
-
-
0.05
μA VCB= 120V, IE = 0 A
IEBO
-
-
0.05
μA VEB= 4V, IC =0 mA
hFE
175
-
500
VCE= 5V, IC= 10mA
VCE(sat)
-
-
0.25
V IC= 50mA, IB= 5mA
VBE(sat)
-
-
1
V IC= 50mA, IB= 5mA
VBE
-
-
0.8
V VCE= 5V, IC= 1mA
Cob
-
-
4
pF VCB= 10V, IE= 0 mA, f=1MHz
fT
100
-
-
MHz VCE= 10V, IC= 1mA , f=100MHz
http://www.SeCoSGmbH.com/
29-Dec-2010 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 1
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