2N5551 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

Elektronische Bauelemente
2N5551
NPN Silicon
General Purpose Transistor
FEATURES
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-92
4.55±0.2
3 . 5 ±0. 2
* Switching and amplification in high voltage
* Low current(max. 600mA)
* High voltage(max.180v)
0.46
+0 . 1
–0.1
0.
4
3
+0.
–0.
08
07
(1.27 Typ.)
123
1.25⁺–0⁰.^.22
MAXIMUM RATINGS* T_A=25 unless otherwise noted
Symbol
Para
meter
2.54±0.1
Value
V_CBO
Collector-Base Voltage
180
V_CEO
Collector-Emitter Voltage
160
V_EBO
Emitter-Base Voltage
6
I_C
Collector Current -Continuous
0.6
P_C
Collector Dissipation
0.625
T_J, T_stg
Junction and Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
1: Emitter
2: Base
3: Collector
Units
V
V
V
A
W
℃
Parameter
Collector-base breakdown voltage
Collector-emitter
voltage
breakdown
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V_(BR)CBO
V_(BR)CEO*
V_(BR)EBO
I_CBO
I_EBO
h_FE（₁）*
h_FE（₂）*
h_FE（₃）
Collector-emitter saturation voltage V_CEsat*
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Input capacitance
Noise figure
*Pulse test
http://www.SeCoSGmbH.com/
V_BEsat*
f_T
C_ob
C_ib
NF
Test conditions
MIN TYP MAX UNIT
Ic= 100 μA,I_E=0
180
Ic= 1mA, I_B=0
160
I_E= 10μA, I_C=0
6
V_CB= 120V I_E=0
V_EB= 4V, I_C=0
V_CE= 5 V, I_C= 1 mA
80
V_CE= 5 V, I_C = 10 mA
80
V_CE= 5 V, I_C= 50 mA
30
I_C= 10 mA, I_B= 1 mA
I_C= 50 mA, I_B= 5 mA
I_C= 10 mA, I_B= 1 mA
I_C= 50 mA, I_B= 5 mA
V_CE=10V,I_C=10 mA,,f=100MHz 100
V_CB=10V,I_E=0,f=1MHz
V_BE=0.5V,I_C=0,f=1MHz
V_CE=5V,I_c=0.25mA,
f=1KHZ,Rg=1kΩ
V
V
V
50
nA
50
nA
250
0.15
V
0.2
1
V
1
300 MHz
6
pF
20
pF
8
dB
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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