2N5550 Datasheet, PDF (1/2 Pages) ON Semiconductor – mplifier Transistors(NPN Silicon)

Elektronische Bauelemente
2N5550
0.6 A, 160 V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Switching and amplification in high voltage
Applications such as telephony
Low current(max.600mA)
High voltage(max.160V)
TO-92
G
H
Collector
3
2
Base
1
Emitter
J
A
D
B
K
E
CF
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATING
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
160
140
6
0.6
0.625
150, -55~150
UNIT
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
PARAMETER
SYMBOL MIN TYP MAX UNIT
TEST CONDITION
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
V(BR)CBO
160
-
-
V IC=100µA, IE = 0A
V(BR)CEO
140
-
-
V IC=1mA, IB = 0A
V(BR)EBO
6
-
-
V IE=10µA, IC = 0A
ICBO
-
-
0.1
µA VCB=100V, IE = 0 A
IEBO
-
-
0.05
µA VEB=4 V, IC =0 mA
hFE1
60
-
-
VCE=5V, IC=1mA
hFE2
60
-
250
VCE=5V, IC=10mA
hFE3
20
-
-
VCE=5V, IC=50mA
Collector to Emitter Saturation Voltage
Base to Emitter Voltage
Collector Output Capacitance
Transition Frequency
Noise Figure
VCE(sat)
-
-
-
0.15
V IC=10mA, IB=1mA
-
0.25
V IC=50mA, IB=5mA
VBE(sat)
-
-
-
1
V IC=10mA, IB=1mA
-
1.2
V IC=50mA, IB=5mA
Cob
-
-
6
pF VCB = 10V, IE = 0A, f=1MHz
fT
100
-
300
MHz VCE = 10V, IC = 10mA, f=100MHz
NF
-
-
10
dB ^{VCE =5V, IC = 0.25mA,}
f=1KHz, RS=1kΩ
http://www.SeCoSGmbH.com/
8-Mar-2010 Rev. A
Any changes of specification will not be informed individually.
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