2N5401 Datasheet, PDF (1/1 Pages) NXP Semiconductors – PNP high-voltage transistor

Elektronische Bauelemente
2N5401
PNP Transistor
Plastic-Encapsulate Transistors
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-92
4.55±0.2
3 . 5 ±0. 2
FEATURES
Power Dissipation
P_CM : 0.625 W (Tamb=25^oC)
Collector current
I_CM : - 0.6 A
Collector-base voltage
V_(BR)CBO : -160 V
Operating and storage junction temperature range
T_J, T_stg: -55 ^oCto +150 ^oC
0 .4 6 ^+– 00..1¹
0 . 4 3 ^+– _{00.. 0078}
(1.27 Typ.)
123
1.25⁺–0⁰.^.22
2.54±0.1
1: Emitter
2: Base
3: Collector
ELECTRICAL CHARACTERISTICS (Tamb=25^oC unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
f_T
Test conditions
Ic= -100 µA, IE=0
Ic= -1 mA, IB=0
IE= -10 µA, IC=0
VCB= -120 V, IE=0
VEB= -4 V, IC=0
VCE= -5 V, IC=-1 mA
VCE= -5 V, IC= -10 mA
VCE= -5 V, IC=-50 mA
IC= -50 mA, IB= -5 mA
IC= -50 mA, IB= -5 mA
VCE=-5V, IC=-10mA
f =30MHz
MIN
-160
-150
-5
80
80
50
100
TYP
MAX
-0.1
-0.1
UNIT
V
V
V
µA
µA
250
-0.5
V
-1
V
MHz
CLASSIFICATION OF
Rank
Range
h_FE(2)
A
80~160
B
120~180
C
150~ 250
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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