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| 2N5172 Datasheet, PDF (1/1 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier | |||
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Elektronische Bauelemente
2N5172
0.5 A, 25 V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of â-Câ specifies halogen & lead-free
FEATURES
ï¬ General Purpose Amplifier Transistor
TO-92
G
H
Collector
ï«ï
ï ï¬ï
Base
ïªï
Emitter
J
A
D
B
K
E
CF
ïªEmitter
ï«Collector
ï¬Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal resistance, junction to ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
25
25
5
0.5
625
200
150, -55~150
Unit
V
V
V
A
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test Condition
Collector to Base Breakdown Voltage
V(BR)CBO
25
-
-
V IC=0.01mA, IE=0A
Collector to Emitter Breakdown Voltage V(BR)CEO
25
-
-
V IC=10mA, IB=0A
Emitter to Base Breakdown Voltage
V(BR)EBO
5
-
-
V IE=0.01mA, IC=0A
Collector Cut-Off Current
ICBO
-
-
0.1
μA VCB=25V, IE=0A
Emitter Cut-Off Current
IEBO
-
-
0.1
μA VEB= 5V, IC=0mA
DC Current Gain
hFE
100
-
500
VCE=10V, IC=10mA
Collector to Emitter Saturation Voltage
VCE(sat)
-
-
0.25
V IC=10mA, IB =1mA
Base to Emitter Saturation Voltage
VBE(sat)
0.5
-
1.2
V VCE=10V, IC =10mA
http://www.SeCoSGmbH.com/
29-Dec-2010 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 1
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