2N4403_15 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – Plastic-Encapsulate Transistors

Elektronische Bauelemente
2N4403
PNP Transistor
Plastic-Encapsulate Transistors
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-92
FEATURES
Power Dissipation
MAXIMUM RATINGS* T_A=25^oC unless otherwise noted
Symbol Parameter
Value
Units
V_CBO
Collector-Base Voltage
-40
V
V_CEO
Collector-Emitter Voltage
-40
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current -Continuous
-600
mA
P_C *
Collector Power dissipation
0.625
W
T_J
T_stg
R_θJA
Junction Temperature
Storage Temperature
Thermal Resistance, junction to Ambient
150
-55to +150
357
o_C
o_C
o_{C /mW}
4.55±0.2
3 . 5 ±0. 2
0 .4 6 ^+– 00..1¹
0 . 4 3 ^+– _{00.. 0078}
(1.27 Typ.)
123
1.25⁺–0⁰.^.22
2.54±0.1
1: Emitter
2: Base
3: Collector
ELECTRICAL CHARACTERISTICS (Tamb=25^oC unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector capacitance
Delay time
Rise time
Storage time
Fall time
Symbol Test conditions
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE(1)
h_FE(2)
h_FE(3)
h_FE(4)
h_FE(5)
V_CE(sat)1
V_CE(sat)2
V_BE(sat)1
V_BE(sat)2
f_T
C_ob
t_d
t_r
t_S
t_f
I_C=-100µA,I_E=0
I_C=-1mA,I_B=0
I_E=-100µA,I_C=0
V_CB=-35V,I_E=0
V_EB=-5V,I_C=0
V_CE=-1V,I_C=-0.1mA
V_CE=-1V,I_C=-1mA
V_CE=-1V,I_C=-10mA
V_CE=-1V,I_C=-150mA
V_CE=-2V,I_C=-500mA
I_C=-150mA,I_B=-15mA
I_C=-500mA,I_B=-50mA
I_C=-150mA,I_B=-15mA
I_C=-500mA,I_B=-50mA
V_CE=-10V,I_C=-20mA,f=100MHz
V_CB=-10V,I_E=0,f=100KHz
V_CC=-30V, I_C=-150mA
I_B1=- I_B2=-15mA
MIN TYP MAX UNIT
-40
-40
-6
30
60
100
100
20
-0.75
200
V
V
V
-100 nA
-100 nA
300
-0.4
-0.75
-0.95
-1.3
8.5
15
20
225
30
V
V
V
V
MHz
pF
nS
nS
nS
nS
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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