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2N4401 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN switching transistor
Elektronische Bauelemente
2N4401
NPN Transistor
Plastic-Encapsulate Transistors
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-92
Features
Power Dissipation
4.55±0.2
3 . 5 ±0. 2
MAXIMUM RATINGS* TA=25 oC unless otherwise noted
Symbol Parameter
Value
Units
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
600
mA
PC*
TJ
Collector Power dissipation
Junction Temperature
0.625
W
150
oC
Tstg
Storage Temperature
-55to +150
oC
RθJA
Thermal Resistance, junction to Ambient
357
oC /mW
0 .4 6 +– 00..11
0 . 4 3 +– 00.. 0078
(1.27 Typ.)
123
1.25+–00..22
2.54±0.1
1: Emitter
2: Base
3: Collector
ELECTRICAL CHARACTERISTICS ( Tamb=25oC unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Delay time
Rise time
Storage time
Fall time
http://www.SeCoSGmbH.com/
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Cob
td
tr
tS
tf
Test conditions
MIN MAX UNIT
IC=100µA , IE=0
60
V
IC= 1mA , IB=0
40
V
IE=100µA, IC=0
6
V
VCB=35V, IE=0
0.1
µA
VCE=35V, IB=0
0.5
µA
VEB=5V, IC=0
0.1
µA
VCE=1V, IC= 0.1mA
20
VCE=1V, IC=1mA
40
VCE=1V, IC= 10mA
50
VCE=1V, IC=150mA
100
300
VCE=2V, IC= 500mA
40
IC=150 mA, IB=15mA
0.4
V
IC=500 mA, IB=50mA
0.75
V
IC=150 mA, IB=15mA
0.95
V
IC=500 mA, IB=50mA
V
VCE= 10V, IC= 20mA,
250
f=100MHz
MHz
VCB=10V, IE= 0,f=1MHz
6.5
pF
VCC=30V, VBE=2V
IC=150mA, IB1=15mA
VCC=30V, IC=150mA
IB1= IB2= 15mA
15
nS
20
nS
225
nS
30
nS
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
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