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2N4400 Datasheet, PDF (1/1 Pages) ON Semiconductor – General Purpose Transistors(NPN Silicon)
Elektronische Bauelemente
2N4400
0.6 A, 60 V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 General Purpose Amplifier Transistor
TO-92
G
H
Collector


Base

Emitter
J
A
D
B
K
E
CF
 Emitter
 Base
 Collector
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal resistance, junction to ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
60
40
6
0.6
625
200
150, -55~150
Unit
V
V
V
A
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test Condition
Collector to Base Breakdown Voltage
V(BR)CBO
60
-
-
V IC= 0.1mA, IE = 0A
Collector to Emitter Breakdown Voltage
V(BR)CEO *
40
-
-
V IC= 1mA, IB = 0A
Emitter to Base Breakdown Voltage
V(BR)EBO
6
-
-
V IE= 0.1mA, IC = 0A
Collector Cut-Off Current
ICBO
-
-
0.1
μA VCB= 60V, IE = 0 A
Emitter Cut-Off Current
IEBO
-
-
0.1
μA VEB= 6V, IC =0 mA
20
-
-
VCE= 1V, IC= 1mA
DC Current Gain
hFE *
40
-
-
50
-
150
VCE= 1V, IC= 10mA
VCE= 1V, IC= 150mA
20
-
-
VCE= 2V, IC= 500mA
Collector to Emitter Saturation Voltage
-
VCE(sat) *
-
-
0.4
V
IC= 150mA, IB= 15mA
-
0.75
IC= 500mA, IB= 50mA
Base to Emitter Saturation Voltage
VBE(sat) *
0.75
-
-
-
0.95
1.2
V
IC= 150mA, IB=15mA
IC= 500mA, IB= 50mA
Collector output Capacitance
Cob
-
-
6.5
pF VCB = 5V, IE = 0A, f=1MHz
Emitter input Capacitance
Cib
-
-
30
pF VEB = 5V, IC = 0A, f=1MHz
Transition Frequency
fT *
*Pulse test:Pulse Width ≦ 300 μs, Duty Cycle ≦ 2.0%.
200
-
-
MHz VCE = 10V, IC = 20mA, f=100MHz
http://www.SeCoSGmbH.com/
29-Dec-2010 Rev. A
Any changes of specification will not be informed individually.
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