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2N4126_15 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
2N4126
-0.2 A, -25 V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 PNP Silicon Epitaxial Transistor for Switching and Amplifier
Applications.
 Complementary of the 2N4124
G
H
Collector


Base

Emitter
J
A
D
B
K
E
CF
TO-92
 Emitter
 Base
 Collector
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
-25
-25
-4
-0.2
625
200
150, -55~150
Unit
V
V
V
A
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter
Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE (1)*
hFE (2)*
Min
-25
-25
-4
-
-
120
60
Typ
-
-
-
-
-
-
-
Max
-
-
-
-50
-50
360
-
Unit
Test Condition
V IC= -0.01mA, IE = 0A
V IC=-1mA, IB = 0A
V IE= -0.01mA, IC = 0A
nA VCB=- 20V, IE = 0 A
nA VEB= -3V, IC = 0 mA
VCE= -1V, IC= -2 mA
VCE= -1V, IC=-50mA
Collector to Emitter Saturation Voltage VCE(sat)*
-
-
-0.4
V IC=-50mA, IB=-5mA
Base to Emitter Saturation Voltage
VBE(sat)*
-
-
-0.95
V IC=-50mA, IB=-5mA
Collector output Capacitance
Transition Frequency
Cob
-
-
4.5
pF VCB = -5V, IE = 0A, f=1MHz
fT
250
-
-
MHz
VCE = -20V, IC = -10mA,
f=100MHz
*Pulse test：pulse width ≦ 300s, duty cycle ≦ 1.5%.
http://www.SeCoSGmbH.com/
29-Dec-2010 Rev. A
Any changes of specification will not be informed individually.
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