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| 2N4124 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN general purpose transistor | |||
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Elektronische Bauelemente
2N4124
0.2 A, 30 V
NPN Plastic Encapsulated Transistor
FEATURES
ï¬ High DC Current Gain
ï¬ High Transition Frequency
RoHS Compliant Product
A suffix of â-Câ specifies halogen & lead-free
TO-92
G
H
Collector
ï¬ï
ï«ï
Base
ïªï
Emitter
J
A
D
B
K
E
CF
ïª Emitter
ï« Base
ï¬ Collector
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
30
25
5
0.2
350
357
150, -55~150
Unit
V
V
V
A
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE (1)
hFE (2)
Min
30
25
5
-
-
120
60
Typ
-
-
-
-
-
-
-
Max
-
-
-
50
50
360
-
Unit
Test Condition
V IC= 0.01mA, IE = 0A
V IC=1mA, IB = 0A
V IE= 0.01mA, IC = 0A
nA VCB= 20V, IE = 0 A
nA VEB= 3V, IC = 0 mA
VCE= 1V, IC= 2 mA
VCE= 1V, IC=50mA
Collector to Emitter Saturation Voltage
VCE(sat)
-
-
0.3
V IC=50mA, IB=5mA
Base to Emitter Saturation Voltage
Collector output Capacitance
Transition Frequency
VBE(sat)
-
-
0.95
V IC=50mA, IB=5mA
Cob
-
-
4
pF VCB = 5V, IE = 0A, f=1MHz
fT
300
-
-
MHz VCE = 20V, IC = 10mA, f=100MHz
http://www.SeCoSGmbH.com/
29-Dec-2010 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 1
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