2N3906_10 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – PNP General Purpose Transistor

Elektronische Bauelemente
2N3906
-0.2A, -40V
PNP General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
Power Dissipation P_CM: 625mW (Ta=25°C)
Collector Current I_CM: -200mA
Collector – Base Voltage V_(BR)CBO: -40V
CLASSIFICATION OF h_FE(1)
Product-Rank
2N3906-O
Range
100~200
2N3906-Y
200~300
2N3906-G
300~400
TO-92
G
H
J
A
D
B
K
E
CF
1Emitter
2Base
3Collector
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
2
Base
Collector
3
1
Emitter
ABSOLUTE MAXIMUM RATINGS (T_a = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current -Continuous
Cpllector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
-40
-40
-5
-0.2
625
+150, -55 ~ +150
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (T_a = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max.
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter - Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEX
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
-40
-40
-5
-
-
100
60
-
-
250
-
-
-
-
-
-
-
-0.1
-50
-
-0.1
-
400
-
-
-
-0.4
-
-0.95
-
-
Unit
V
V
V
µA
nA
µA
V
V
MHz
Test Conditions
IC=-10µA, IE=0
IC=-1mA, IB=0
IE=-100µA, IC=0
VCB=-40V, IE=0
VCE=-30V, VBE(off)=-3V
VEB =-5V, IC=0
VCE=-1V, IC=-10mA
VCE=-1V, IC=-50mA
IC=-50mA, IB=-5mA
IC=-50mA, IB=-5mA
VCE=-20V, IC=-10mA, f=100MHz
http://www.SeCoSGmbH.com/
31-Dec-2010 Rev.B
Any changes of specification will not be informed individually.
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