2N3904 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN switching transistor

Elektronische Bauelemente
2N3904
NPN Silicon
General Purpose Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-92
ƔFEATURES
. Power Dissipation
PCM: 625 mW (Ta=25к)
. Collector Current
ICM: 200 mA
. Collector - Base Voltage
V(BR)CBO: 60 V
COLLECTOR
3
2
BASE
1
1
2
EMITTER
3
ƔELECTRICAL CHARACTERISTICS (T_A = 25 к unless otherwise specified)
Parameter
SYMBOL TEST CONDITIONS
Min.
Typ.
Collector - Emitter Breakdown Voltage
Collector - Base Breakdown Voltage
Emitter - Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector - Emitter Saturation Voltage
Base - Emitter Saturation Voltage
Transition Frequency
V(BR)CEO IC = 1 mA, IB = 0 A
40
-
V(BR)CBO IC = 100 µA, IE = 0 A
60
-
V(BR)EBO IE = 100 µA, IC = 0 A
6
-
ICBO
VCB = 60 V, IE = 0 A
-
-
ICEO
VCE = 40 V, IB = 0 A
-
-
IEBO
VEB = 5 V, IC = 0 A
-
-
hFE(1)
VCE = 1 V, IC = 10 mA
100
-
hFE(2)
VCE = 1 V, IC = 50 mA
60
-
VCE(sat) IC = 50 mA, IB = 5 mA
-
-
VBE(sat) IC = 50 mA, IB = 5 mA
-
-
fT
VCE = 20 V, IC = 10 mA
300
f = 100 MHz
-
Operating and Storage Junction Temperature Range TJ, TSTG
-
-55 ~ +150
Max.
-
-
-
0.1
0.1
0.1
400
-
0.3
0.95
-
UNIT
V
V
V
µA
-
V
V
MHz
к
ƔCLASSIFICATION OF h_FE(1)
Rank
O
Rang
100 ~ 200
Y
200 ~ 300
G
300 ~ 400
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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