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| 2N3828_15 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic Encapsulated Transistor | |||
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Elektronische Bauelemente
2N3828
0.1 A, 40 V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of â-Câ specifies halogen & lead-free
FEATURES
ï¬ General Purpose Amplifier Transistor
TO-92
G
H
Collector
ï¬ï
ï«ï
Base
ïªï
Emitter
J
A
D
B
K
E
CF
ïª Emitter
ï« Base
ï¬ Collector
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal resistance, junction to ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
40
40
3
0.1
300
416
150, -55~150
Unit
V
V
V
A
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test Condition
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
.
V(BR)CBO
40
-
-
V IC= 0.01mA, IE = 0A
V(BR)CEO
40
-
-
V IC= 1mA, IB = 0A
V(BR)EBO
3
-
-
V IE= 0.01mA, IC = 0A
ICBO
-
-
0.1
μA VCB= 60V, IE = 0 A
ICEX
-
-
50
nA VCE= 30V, VBE(off) = 3V
IEBO
-
-
0.1
μA VEB= 5V, IC =0 mA
hFE
30
-
200
VCE= 1V, IC= 12mA
VCE(sat)
-
-
0.3
V IC= 50mA, IB= 5mA
VBE(sat)
-
-
0.95
V IC= 50mA, IB= 5mA
fT
360
-
-
MHz VCE = 20V, IC = 10mA, f=100MHz
http://www.SeCoSGmbH.com/
29-Dec-2010 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 1
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