2N2907A Datasheet, PDF (1/5 Pages) Seme LAB – HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR

Elektronische Bauelemente
2N2907A
PNP Silicon
General Purpose Transistor
Features
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
Epitaxial Planar Die Construction
Complementary NPN Type Available 2N2222A
Ideal for Medium Power Amplification and Switching
TO–92
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector±Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T_A = 25°C
Derate above 25°C
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_D
P_D
T_J, T_stg
Value
–60
–60
–5.0
–600
625
5.0
1.5
12
–55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
Symbol
R_qJA
R_qJC
Max
200
83.3
Unit
°C/W
°C/W
1
2
3
COLLECTOR
1
2
BASE
3
EMITTER
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage⁽¹⁾
(I_C = –10 mAdc, I_B = 0)
Collector–Base Breakdown Voltage
(I_C = –10 mAdc, I_E = 0)
Emitter–Base Breakdown Voltage
(I_E = –10 mAdc, I_C = 0)
Collector Cut-off Current
(V_CE = –50 Vdc, V_EB(off) = –0.5 Vdc)
Collector Cut-off Current
(V_CB = –50 Vdc, I_E = 0)
(V_CB = –50 Vdc, I_E = 0, T_A = 150°C)
Emitter Cut-off Current
(V_EB = –3.0 Vdc)
Collector Cut-off Current
(V_CE = –35 V)
Base Cut-off Current
(V_CE = –30 Vdc, V_EB(off) = –0.5 Vdc)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Symbol
Min
Max
Unit
V_(BR)CEO
V_(BR)CBO
V_(BR)EBO
I_CEX
I_CBO
I_EBO
I_CEO
I_BEX
–40
–60
–5.0
—
—
—
—
—
—
—
—
—
–50
–0.10
–15
–100
–100
–50
Vdc
Vdc
Vdc
nAdc
µAdc
nAdc
nAdc
nAdc
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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