1N4001G Datasheet, PDF (1/2 Pages) NXP Semiconductors – Rectifiers(Rugged glass package, using a high temperature alloyed construction)

1N4001G THRU 1N4007G
Elektronische Bauelemente
VOLTAGE 50V ~ 1000V
1.0 AMP Glass Passivated Silicon Rectifiers
A suffix of "-C" indicates halogen-free & RoHS Compliant
DO-41
ƔFEATURES
. RoHS Compliant Product
. Low Forward Voltage Drop
. High Current Capability
. High Reliability
. High Surge Current Capability
ƔMECHANICAL DATA
. Case: Molded Plastic
. Epoxy: UL 94V-0 Rate Flame Retardant
. Lead: Axial Lead, Solder Able per MIL-STD-202,
Method 208 Guaranteed
. Polarity: Color Band Denotes Cathode End
. Mounting Position: Any
. Weight: 0.34 grams
.107(2.7)
.080(2.0)
DIA.
1.0(25.4)
MIN.
.205(5.2)
.166(4.2)
.034(.9)
.028(.7)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
ƔMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25ȃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
1N4001G 1N4002G 1N4003G
Maximum Recurrent Peak Reverse Voltage
50
100
200
Maximum RMS Voltage
35
70
140
Maximum DC Blocking Voltage
50
100
200
Maximum Average Forward Rectified Current,
.375" (9.5mm) Lead Length at Ta=75 к
Peak Forward Surge Current, 8.3 ms Single
Half Sine-Wave Superimposed on Rated Load
(JEDEC method)
Maximum Instantaneous Forward Voltage at 1.0A
Maximum DC Reverse Current
Ta = 25 к
at Rated DC Blocking Voltage
Ta = 100 к
Typical Junction Capacitance (Note1)
Typical Thermal Resistance RșJA (Note 2)
Operating and Storage Temperature Range TJ, TSTG
NOTES:
1. Measured at 1MHz and Applied Reverse Voltage of 4.0V D.C.
2. Thermal Resistance from Junction to Ambient .375" (9.5mm) Lead Length.
1N4004G 1N4005G
400
600
280
420
400
600
1.0
30
1.0
5.0
50
15
50
-65 ~ +175
1N4006G
800
560
800
1N4007G
1000
700
1000
UNITS
V
V
V
A
A
V
µA
pF
к/W
к
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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