SICDS50V6_13 Datasheet, PDF (2/4 Pages) SEC Electronics Inc. – Hall effect measuring principle

Parameters Table
SICDS50V6
Current Sensors
PARAMETERS
Supply voltage(±5%)
Current consumption
Secondary nominal r.m.s.
current
Conversion ratio
Linearity
Accuracy
SYMBOL UNIT VALUE
Electrical data
V_C
V
±12…15
I_C
mA 10(@±15)+I_s
I_SN
mA
50
K_N
1:1000
Accuracy - Dynamic performance data
ε_L
%
<±0.15
<±0.65
X_G
%
<±0.90
Offset current
Thermal drift of Io
Response time
di/dt accurately followed
Frequency bandwidth (1)
Ambient operating temperature
Ambient storage temperature
Secondary coil resistance
R. m. s voltage for AC isolation
test
Impulse withstand voltage
1.2/50us
Creepage distance
Clearance distance
Comparative Tracking Index
I_O
mA
<±0.20
Typ Max
I_OT
mA
±0.1 ±0.6
±0.2 ±1.0
t_r
µS
d_i/dt
A/µS
BW
kHz
<1
>200
DC~200
General data
T_A
℃
T_S
℃
Rs
Ω
-40 ~ +85
-40 ~ +90
80
Isolation characteristics
V_d
KV
2.5
V_w
KV
5.7
dCp
mm
5
dCI
mm
5
CTI
175
CONDITIONS
@I_PN
@ I_PN , V_C = ±15V, T_A = 25°C
@ I_PN , V_C = ±12…15V,
T_A = 25°C
@ I_P = 0,T_A = 25°C
@ I_P = 0,-25°C～+85°C
@ I_P = 0,-40°C～-25°C
@ 90% of I_PN step
@-1dB
@ T_A = 70°C
@50Hz, 1 min
Group IIIa
Notes:
Please refer to derating curves in the technical file to avoid excessive core heating at high frequency.
2
V2.00 May 1, 2012