SS3212_1311 Datasheet, PDF (1/8 Pages) SEC Electronics Inc. – CMOS Omnipolar High Sensitivity Micropower Hall Switch

SS3212
CMOS Omnipolar High Sensitivity Micropower Hall Switch
Features
− Micropower consumption for battery powered applications
− Omnipolar, output switches with absolute value of North or South pole from magnet
− Operation down to 2.5V
− High sensitivity for direct reed switch replacement applications
3 pin SOT23 (suffix SO)
3 pin SIP (suffix UA)
General Description
The SS3212 Omnipolar Hall effect sensor IC is fabricated from mixed signal CMOS technology .It incorporates
advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points.
The circuit design provides an internally controlled clocking mechanism to cycle power to the Hall element and
analog signal processing circuits. This serves to place the high current-consuming portions of the circuit into a
“Sleep” mode. Periodically the device is “Awakened” by this internal logic and the magnetic flux from the Hall
element is evaluated against the predefined thresholds. If the flux density is above or below the Bop/Brp thresh-
olds then the output transistor is driven to change states accordingly. While in the “Sleep” cycle the output tran-
sistor is latched in its previous state. The design has been optimized for service in applications requiring extended
operating lifetime in battery powered systems.
The output transistor of the SS3212 will be latched on (Bop) in the presence of a sufficiently strong South or
North magnetic field facing the marked side of the package. The output will be latched off (Brp) in the absence of
a magnetic field.
Applications
− Solid state switch
− Handheld Wireless Handset Awake Switch
− Lid close sensor for battery powered devices
− Magnet proximity sensor for reed switch replacement in low duty cycle applications
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V3.10 Nov 1, 2013