SS259_1311 Datasheet, PDF (1/7 Pages) SEC Electronics Inc. – CMOS Omnipolar High Sensitivity Micropower Hall Switch

SS259
CMOS Omnipolar High Sensitivity Micropower Hall Switch
Packages
3 pin SOT23 (suffix SO)
3 pin SIP (suffix UA)
Features and Benefits
– Operation down to 2.5V
– Micropower consumption for battery
powered applications
– High sensitivity for direct reed switch
replacement applications
– Omnipolar, output switches with absolute
value of North or South pole from magnet
Functional Block Diagram
VDD
Sleep/Awake
Logic
Chopper
Application Examples
– Solid-state switch
– Handheld Wireless Handset Awake Switch
– Lid close sensor for battery powered devices
OUT
– Magnet proximity sensor for reed switch
replacement in low duty cycle applications
Hall
Plate
GND
General Description:
The SS259 Omnipolar Hall effect sensor IC is fabricated from mixed signal CMOS technology. It incorporates
advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points.
The circuit design provides an internally controlled clocking mechanism to cycle power to the Hall element and
analog signal processing circuits. This serves to place the high current-consuming portions of the circuit into a
“Sleep” mode. Periodically the device is “Awakened” by this internal logic and the magnetic flux from the Hall
element is evaluated against the predefined thresholds. If the flux density is above or below the B_OP/B_RP thresh-
olds then the output transistor is driven to change states accordingly. While in the “Sleep” cycle the output tran-
sistor is latched in its previous state. The design has been optimized for service in applications requiring extended
operating lifetime in battery powered systems.
The output transistor of the SS259 will be latched on (B_OP) in the presence of a sufficiently strong South or North
magnetic field facing the marked side of the package. The output will be latched off (B_RP) in the absence of a
magnetic field.
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V3.10 Nov 1, 2013