TIP41D Datasheet, PDF (2/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(6A,120-160V,65W)

SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
TIP41D
TIP41E
IC=30mA; IB=0
TIP41F
VCE_(sat) Collector-emitter saturation voltage IC=6A; IB=1.5A
VBE
Base-emitter on voltage
IC=6A ; VCE=4V
ICES
Collector
cut-off current
TIP41D
VCE=120V; VEB=0
TIP41E
VCE=140V; VEB=0
TIP41F
VCE=160V; VEB=0
ICEO
Collector cut-off current
VCE=90V; IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.3A ; VCE=4V
hFE-2
DC current gain
IC=3A ; VCE=4V
fT
Transition frequency
IC=0.5A ; VCE=10V
Product Specification
TIP41D/41E/41F
MIN
TYP.
MAX UNIT
120
140
V
160
1.5
V
2.0
V
0.4
mA
0.7
mA
1.0
mA
30
15
3
MHz
2