TIP35 Datasheet, PDF (2/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(25A,40-100V,125W)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
TIP35/35A/35B/35C
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TIP35
V(SUS)CEO
Collector-emitter
sustaining voltage
TIP35A
TIP35B
IC=30mA ;IB=0
TIP35C
VCE_(sat)-1 Collector-emitter saturation voltage IC=15A ;IB=1.5A
VCE_(sat)-2 Collector-emitter saturation voltage IC=25A; IB=5A
VBE-1
Base-emitter on voltage
IC=15A ; VCE=4V
VBE-2
Base-emitter on voltage
IC=25A ; VCE=4V
ICEO
Collector
cut-off current
TIP35/35A VCE=30V; IB=0
TIP35B/35C VCE=60V; IB=0
TIP35
VCE=40V;VEB=0
ICES
IEBO
hFE-1
Collector
cut-off current
TIP35A
TIP35B
TIP35C
Emitter cut-off current
DC current gain
VCE=60V;VEB=0
VCE=80V;VEB=0
VCE=100V;VEB=0
VEB=5V; IC=0
IC=1.5A ; VCE=4V
hFE-2
fT
DC current gain
Transition frequency
IC=15A ; VCE=4V
IC=1A ; VCE=10V
MIN TYP. MAX UNIT
40
60
V
80
100
1.8
V
4.0
V
2.0
V
4.0
V
1.0
mA
0.7
mA
1.0
mA
25
15
75
3
MHz
2