TIP160 Datasheet, PDF (2/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,320-380V,125W)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
TIP160/161/162
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
TIP160
TIP161 IC=10mA, IB=0
TIP162
VCE_(sat)-1 Collector-emitter saturation voltage IC=6.5A ,IB=0.1A
VCE_(sat)-2 Collector-emitter saturation voltage IC=10A ,IB=1A
VBE_(sat) Base-emitter saturation voltage
IC=6.5A ,IB=0.1A
VF
Diode forward voltage
IF=10A
ICEO
Collector
cut-off current
TIP160 VCE=320V, IB=0
TIP161 VCE=350V, IB=0
TIP162 VCE=380V, IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=4A ; VCE=2.2V
Switching times
t_d
Delay time
t_r
Rise time
t_s
Storage time
t_f
Fall time
VCC =33 V, IC = 6.5 A,
IB1 =-IB2 =100 mA
tp=20µs ;Duty CycleA2.0%
MIN TYP. MAX UNIT
320
350
V
380
2.8
V
2.9
V
2.2
V
3.5
V
1.0
mA
100
mA
200
0.3
µs
1.5
µs
2.3
µs
2.8
µs
2