TIP140 Datasheet, PDF (2/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,60-100V,125W)

SavantIC Semiconductor
Silicon NPN Darlington Power Transistors
Product Specification
TIP140/141/142
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
TIP140
TIP141 IC=30mA, IB=0
TIP142
VCE_(sat)-1 Collector-emitter saturation voltage IC=5A ,IB=10mA
VCE_(sat)-2 Collector-emitter saturation voltage IC=10A ,IB=40mA
VBE_(sat) Base-emitter saturation voltage
IC=10A ,IB=40mA
VBE
Base-emitter on voltage
IC=10A ; VCE=4V
ICBO
Collector
cut-off current
ICEO
Collector
cut-off current
TIP140 VCB=60V, IE=0
TIP141 VCB=80V, IE=0
TIP142 VCB=100V, IE=0
TIP140 VCE=30V, IB=0
TIP141 VCE=40V, IB=0
TIP142 VCE=50V, IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
hFE-2
DC current gain
Switching times
IC=5A ; VCE=4V
IC=10A ; VCE=4V
t_d
Delay time
t_r
Rise time
t_stg
Storage time
t_f
Fall time
VCC = 30 V, IC = 5.0 A,
IB =20 mA; Duty CycleE20%
IB1 = IB2, RC & RB Varied,
TJ = 25
MIN TYP. MAX UNIT
60
80
V
100
2.0
V
3.0
V
3.5
V
3.0
V
1
mA
2
mA
1000
500
2
mA
0.15
µs
0.55
µs
2.5
µs
2.5
µs
2