TIP135 Datasheet, PDF (2/3 Pages) Power Innovations Ltd – PNP SILICON POWER DARLINGTONS

SavantIC Semiconductor
Silicon PNP Darlington Power Transistors
Product Specification
TIP135/136/137
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
TIP135
TIP136 IC=-30mA, IB=0
TIP137
VCE_(sat)-1 Collector-emitter saturation voltage IC=-4A ,IB=-16mA
VCE_(sat)-2 Collector-emitter saturation voltage IC=-6A ,IB=-30mA
VBE
Base-emitter on voltage
IC=-4A ; VCE=-4V
TIP135 VCB=-60V, IE=0
ICBO
Collector cut-off current TIP136 V_CB=-80V, I_E=0
TIP137 VCB=-100V, IE=0
TIP135 VCE=-30V, IB=0
ICEO
Collector cut-off current TIP136 V_CE=-40V, I_B=0
TIP137 VCE=-50V, IB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-4V
hFE-2
DC current gain
IC=-4A ; VCE=-4V
COB
Output capacitance
IE=0 ; VCB=-10V,f=0.1MHz
MIN TYP. MAX UNIT
-60
-80
V
-100
-2.0
V
-3.0
V
-2.5
V
-0.2
mA
500
1000
-0.5
mA
-5.0
mA
15000
250
pF
2