TIP130 Datasheet, PDF (2/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(8.0A,60-100V,70W)

SavantIC Semiconductor
Silicon NPN Darlington Power Transistors
Product Specification
TIP130/131/132
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
TIP130
TIP131 IC=30mA, IB=0
TIP132
VCE_(sat)-1 Collector-emitter saturation voltage IC=4A ,IB=16mA
VCE_(sat)-2 Collector-emitter saturation voltage IC=6A ,IB=30mA
VBE
Base-emitter on voltage
IC=4A ; VCE=4V
TIP130 VCB=60V, IE=0
ICBO
Collector cut-off current TIP131 V_CB=80V, I_E=0
TIP132 VCB=100V, IE=0
TIP130 VCE=30V, IB=0
ICEO
Collector cut-off current TIP131 V_CE=40V, I_B=0
TIP132 VCE=50V, IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=4V
hFE-2
DC current gain
IC=4A ; VCE=4V
COB
Output capacitance
IE=0 ; VCB=10V,f=0.1MHz
MIN TYP. MAX UNIT
60
80
V
100
2.0
V
3.0
V
2.5
V
0.2
mA
500
1000
0.5
mA
5.0
mA
15000
250
pF
2