TIP125 Datasheet, PDF (2/4 Pages) Power Innovations Ltd – PNP SILICON POWER DARLINGTONS

SavantIC Semiconductor
Silicon PNP Darlington Power Transistors
Product Specification
TIP125/126/127
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
TIP125
TIP126 IC=-0.1A, IB=0
TIP127
VCE_(sat)-1 Collector-emitter saturation voltage IC=-3A ,IB=-12mA
VCE_(sat)-2 Collector-emitter saturation voltage IC=-5A ,IB=-20mA
VBE
Base-emitter on voltage
IC=-3.0A ; VCE=-3V
ICBO
Collector
cut-off current
TIP125
TIP126
TIP127
VCB=-60V, IE=0
VCB=-80V, IE=0
VCB=-100V, IE=0
ICEO
Collector
cut-off current
TIP125
TIP126
TIP127
VCE=-30V, IB=0
VCE=-40V, IB=0
VCE=-50V, IB=0
IEBO
hFE-1
hFE-2
COB
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
VEB=-5V; IC=0
IC=-0.5A ; VCE=-3V
IC=-3.0A ; VCE=-3V
IE=0 ; VCB=-10V,f=0.1MHz
MIN TYP. MAX UNIT
-60
-80
V
-100
-2.0
V
-4.0
V
-2.5
V
-0.2
mA
1000
1000
-0.5
mA
-2
mA
300
pF
2