TIP100 Datasheet, PDF (2/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(8A,60-100V,80W)

SavantIC Semiconductor
Silicon NPN Darlington Power Transistors
Product Specification
TIP100/101/102
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
TIP100
TIP101 IC=30mA, IB=0
TIP102
VCE_(sat)-1 Collector-emitter saturation voltage IC=3A ,IB=6mA
VCE_(sat)-2 Collector-emitter saturation voltage IC=8A ,IB=80mA
VBE
Base-emitter on voltage
IC=8A ; VCE=4V
TIP100 VCB=60V, IE=0
ICBO
Collector cut-off current TIP101 V_CB=80V, I_E=0
TIP102 VCB=100V, IE=0
TIP100 VCE=30V, IB=0
ICEO
Collector cut-off current TIP101 V_CE=40V, I_B=0
TIP102 VCE=50V, IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=3A ; VCE=4V
hFE-2
DC current gain
IC=8A ; VCE=4V
COB
Output capacitance
IE=0 ; VCB=10V,f=0.1MHz
MIN TYP. MAX UNIT
60
80
V
100
2.0
V
2.5
V
2.8
V
50
µA
1000
200
50
µA
2
mA
20000
200
pF
2