S2000N Datasheet, PDF (2/3 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED MESA TYPE (COLOR TV HORIZONTAL OUTPUT, SWITCHING REGULATOR APPLICATIONS)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
S2000N
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IB=500mA ;VBE=-1.7V;L=40mH
700
V
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
5
V
VCE_(sat)-1 Collector-emitter saturation voltage IC=4.5A ;IB=2.0A
1.0
V
VCE_(sat)-2 Collector-emitter saturation voltage IC=4.5A ;IB=1.0A
5.0
V
VBE_(sat) Base-emitter saturation voltage
IC=4.5A ;IB=1.0A
1.2
V
ICBO
Collector cut-off current
VCB=1500V; VBE=0
1.0
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
10
30
hFE-2
DC current gain
IC=4.5A ; VCE=5V
4.5
9
COB
Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
95
pF
fT
Transition frequency
IC=0.1A ; VCE=10V
2
MHz
Switching times
t_s
Storage time
t_f
Fall time
ICP=4.5A;IB1(_end)=1.0A
fH=15.75kHz
8
12
µs
0.4
0.7
µs
2