S2000A Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
S2000A
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IB=500mA ;VBE=-1.7V;L=40mH
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCE_(sat) Collector-emitter saturation voltage IC=4.5A ;IB=2A
VBE_(sat) Base-emitter saturation voltage
IC=4.5A ;IB=1.0A
ICBO
Collector cut-off current
VCB=1500V; VBE=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=4.5A ; VCE=5V
COB
Collector output capacitance
fT
Transition frequency
IE=0 ; VCB=10V;f=1MHz
IC=0.1A ; VCE=10V
MIN TYP. MAX UNIT
700
V
5
V
1.0
V
1.2
V
1
mA
10
30
4.5
9
95
pF
2
MHz
2