NS50P Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon PNP Power Transistors

SavantIC Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=-30mA; IB=0
VCE(_sat) Collector-emitter saturation voltage IC=-6A ;IB=-0.6A
VBE
Base-emitter on voltage
IC=-6A ; VCE=-4V
ICES
Collector cut-off current
VCE=-60V; VEB=0
ICEO
Collector cut-off current
VCE=-30V; IB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-0.3A ; VCE=-4V
hFE-2
DC current gain
IC=-3A ; VCE=-4V
fT
Transition frequency
IC=-0.5A ; VCE=-10V
h_FE-1 Classifications
A
B
50-100
80-160
Product Specification
NS50P
MIN TYP. MAX UNIT
-60
V
-1.5
V
-2.0
V
-0.4 mA
-0.7 mA
-1.0 mA
50
160
15
3
MHz
2