NS50N Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=30mA; IB=0
VCE_(sat) Collector-emitter saturation voltage IC=6A; IB=0.6A
VBE
Base-emitter on voltage
IC=6A ; VCE=4V
ICES
Collector cut-off current
VCE=60V; VEB=0
ICEO
Collector cut-off current
VCE=30V; IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.3A ; VCE=4V
hFE-2
DC current gain
IC=3A ; VCE=4V
fT
Transition frequency
IC=0.5A ; VCE=10V
h_FE-1 Classifications
A
B
50-100
80-160
Product Specification
NS50N
MIN TYP. MAX UNIT
60
V
1.5
V
2.0
V
0.4
mA
0.7
mA
1.0
mA
50
160
15
3
MHz
2