NS50B Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=30mA; IB=0
VCE_(sat) Collector-emitter saturation voltage IC=4A; IB=0.4A
VBE_(sat) Base-emitter saturation voltage
IC=4A; IB=0.4A
ICBO
Collector cut-off current
VCB=100V; IE=0
ICEO
Collector cut-off current
VCE=60V; IB=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=1A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=10V
Product Specification
NS50B
MIN TYP. MAX UNIT
60
V
1.0
V
1.5
V
10
µA
0.1
mA
10
µA
100
160
3
MHz
2