NS50A Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon PNP Power Transistors

SavantIC Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=-30mA; IB=0
VCE(_sat) Collector-emitter saturation voltage IC=-4A ;IB=-0.4A
VBE(_sat) Base-emitter saturation voltage
IC=-4A ; IB=-0.4A
ICBO
Collector cut-off current
VCB=-100V; IE=0
ICEO
Collector cut-off current
VCE=-60V; IB=0
IEBO
Emitter cut-off current
VEB=-6V; IC=0
hFE
DC current gain
IC=-1A ; VCE=-5V
fT
Transition frequency
IC=-0.5A ; VCE=-10V
Product Specification
NS50A
MIN TYP. MAX UNIT
-60
V
-1.0
V
-1.5
V
-10
µA
-0.1 mA
-10
µA
100
160
3
MHz
2