MJW16018 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
MJW16018
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=50mA; IB=0
VCE_(sat)-1
Collector-emitter saturation voltage
IC=5A ;IB=2A
TC=110
VCE_(sat)-2 Collector-emitter saturation voltage IC=10A ;IB=5A
VBE_(sat) Base-emitter saturation voltage
ICEV
Collector cut-off current
ICER
Collector cut-off current
IC=5A ;IB=2A
TC=110
VCEV=1500V,VBE(off)=1.5Vdc
TC=100
VCE=1500V; RBE=50>
TC=100
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=5A ; VCE=5V
COB
Collector outoput capacitance
IE=0;f=1kHz ; VCB=10V
Switching times resistive load
t_d
Delay time
t_r
Rise time
t_s
Storage time
t_f
Fall time
IC=5A; IB1= IB2=2.0A
VCC=250V ,RB2=3>
PW=25µs
Duty CycleC2%
MIN TYP. MAX UNIT
800
V
1.0
1.5
V
5.0
V
1.5
1.5
V
0.25
1.50
mA
2.5
mA
0.1
mA
4
450
pF
0.085 0.2
µs
0.90 2.0
µs
4.5
9.0
µs
0.2
0.4
µs
2