MJF18008 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
MJF18008
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
VCE_(sat)-1
VCE_(sat)-2
VBE_(sat)-1
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
IC=0.1A; L=25mH
IC=2A; IB=0.2A
TC=125
IC=4.5A; IB=0.9A
TC=125
IC=2A ;IB=0.2A
VBE_(sat)-2 Base-emitter saturation voltage
IC=4.5A; IB=0.9A
ICES
Collector cut-off current
VCES=RatedVCES;
VEB=0
VCES=800V
TC=125
ICEO
Collector cut-off current
VCE=RatedVCEO; IB=0
IEBO
Emitter cut-off current
VEB=9V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=4.5A ; VCE=1V
hFE-3
DC current gain
IC=2A ; VCE=1V
hFE-4
DC current gain
IC=10mA ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=10V; f=1MHz
COB
Collector outoput capacitance
IE=0; VCB=10V; f=1MHz
Switching times resistive load,Duty CycleC10%,Pulse Width=20µs
t_on
Turn-on time
toff
Turn-off time
VCC=300V ,IC=2A
IB1=0.2A; IB2=1.0A
ton
Turn-on time
toff
Turn-off time
VCC=300V ,IC=4.5A
IB1=0.9A; IB2=2.25A
MIN TYP. MAX UNIT
450
V
0.6
0.65
V
0.7
0.8
V
1.10
V
1.25
V
0.1
0.5
mA
0.1
0.1
mA
0.1
mA
14
34
6
11
10
13
MHz
100
pF
0.3
µs
2.5
µs
0.18
µs
2.5
µs
2