MJF13007 Datasheet, PDF (2/5 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
MJF13007
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=10mA; IB=0
VCEsat-1
VCEsat-2
VCEsat-3
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
IC=2A; IB=0.4A
IC=5A ;IB=1.0A
TC=100
IC=8A ;IB=2.0A
VBEsat-1
VBEsat-2
ICBO
IEBO
hFE-1
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=2A ;IB=0.4A
IC=5A ;IB=1.0A
TC=100
VCB=700V; IE=0
TC=125
VEB=9V; IC=0
IC=2A ; VCE=5V
hFE-2
DC current gain
IC=5A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=10V;f=1MHz
COB
Collector outoput capacitance
IE=0; f=0.1MHz ; VCB=10V
Switching times resistive load
td
Delay time
tr
Rise time
ts
Storage time
tf
Fall time
VCC=125V ,IC=5A
IB1=-IB2=1.0A
tp=25µs
duty cycleC1%
MIN TYP. MAX UNIT
400
V
1.0
V
2.0
3.0
V
3.0
V
1.2
V
1.6
1.5
V
0.1
1.0
mA
0.1 mA
8
40
5
30
4
MHz
80
pF
0.1
µs
1.5
µs
3.0
µs
0.7
µs
2