MJE4340 Datasheet, PDF (2/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(16A,100-160V,125W)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
MJE4340/4341/4342/4343
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MJE4340
VCEO(SUS)
Collector-emitter
sustaining voltage
MJE4341
MJE4342
IC=100mA ;IB=0
MJE4343
VCE_(sat)-1 Collector-emitter saturation voltage IC=8A ;IB=0.8A
VCE_(sat)-2 Collector-emitter saturation voltage IC=16A; IB=2.0A
VBE_(sat) Base-emitter saturation voltage
IC=16A; IB=2.0A
VBE
Base-emitter on voltage
IC=16A ; VCE=4V
MJE4340 VCE=50V; IB=0
ICEO
Collector
cut-off current
MJE4341
MJE4342
VCE=60V; IB=0
VCE=70V; IB=0
MJE4343 VCE=80V; IB=0
ICEX
Collector cut-off current
VCE=RatedVCBO; VBE=1.5V
TC=150
ICBO
Collector cut-off current
VCB=RatedVCB; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=8A ; VCE=2V
hFE-2
DC current gain
IC=16A ; VCE=4V
COB
Output capacitance
IE=0 ; VCB=10V;f=0.1MHz
fT
Transition frequency
IC=-1A ; VCE=20V;f=0.5MHz
MIN TYP. MAX UNIT
100
120
V
140
160
2.0
V
3.5
V
3.9
V
3.9
V
0.75
mA
1.0
5.0
mA
0.75
mA
1.0
mA
15
8
800
pF
1.0
MHz
2