MJE180 Datasheet, PDF (2/3 Pages) Fairchild Semiconductor – Low Power Audio Amplifier Low Current High Speed Switching Applications

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
MJE180/181/182
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
MJE180
MJE181 IC=10mA;IB=0
MJE182
VCE_(sat)-1 Collector-emitter saturation voltage
IC=500mA ;IB=50mA
VCE_(sat)-2 Collector-emitter saturation voltage
IC=1.5A ;IB=150mA
VCE_(sat)-3 Collector-emitter saturation voltage
IC=3A ;IB=600mA
VBE_(sat)-1 Base-emitter saturation voltage
IC=1.5A ;IB=150mA
VBE_(sat)-2 Base-emitter saturation voltage
IC=3A ;IB=600mA
VBE
Base-emitter on voltage
IC=500mA ; VCE=1V
MJE180
VCB=60V; IE=0
TC=150
ICBO
Collector cut-off current
MJE181
VCB=80V; IE=0
TC=150
MJE182
VCB=100V; IE=0
TC=150
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=100mA ; VCE=1V
hFE-2
DC current gain
IC=500mA ; VCE=1V
hFE-3
fT
COB
DC current gain
Transition frequency
Output capacitance
IC=1.5A ; VCE=1V
IC=100mA ; VCE=10V
IE=0 ; VCB=10V,f=0.1MHz
MIN TYP. MAX UNIT
40
60
V
80
0.3
V
0.9
V
1.7
V
1.5
V
2.0
V
1.2
V
0.1
µA
0.1
mA
0.1
µA
0.1
mA
0.1
µA
0.1
mA
0.1
µA
50
250
30
12
50
MHz
30
pF
2