MJE170 Datasheet, PDF (2/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(3.0A,40-80V,12.5W)

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
MJE170/171/172
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
MJE170
MJE171 IC=-10mA;IB=0
MJE172
VCE_(sat)-1 Collector-emitter saturation voltage IC=-500mA ;IB=-50mA
VCE_(sat)-2 Collector-emitter saturation voltage IC=-1.5A ;IB=-150mA
VCE_(sat)-3 Collector-emitter saturation voltage IC=-3A ;IB=-600mA
VBE_(sat)-1 Base-emitter saturation voltage
IC=-1.5A ;IB=-150mA
VBE_(sat)-2 Base-emitter saturation voltage
IC=-3A ;IB=-600mA
VBE
Base-emitter on voltage
IC=-500mA ; VCE=-1V
MJE170
VCB=-60V; IE=0
TC=150
ICBO
Collector cut-off current
MJE171
VCB=-80V; IE=0
TC=150
MJE172
VCB=-100V; IE=0
TC=150
IEBO
Emitter cut-off current
VEB=-7V; IC=0
hFE-1
DC current gain
IC=-100mA ; VCE=-1V
hFE-2
DC current gain
IC=-500mA ; VCE=-1V
hFE-3
DC current gain
IC=-1.5A ; VCE=-1V
fT
Transition frequency
IC=-100mA ; VCE=-10V
COB
Output capacitance
IE=0 ; VCB=-10V,f=0.1MHz
MIN TYP. MAX UNIT
-40
-60
V
-80
-0.3
V
-0.9
V
-1.7
V
-1.5
V
-2.0
V
-1.2
V
-0.1
µA
-0.1 mA
-0.1
µA
-0.1 mA
-0.1
µA
-0.1 mA
-0.1
µA
50
250
30
12
50
MHz
50
pF
2