MJE15028 Datasheet, PDF (2/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(8.0A,120-150V,50W)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
MJE15028
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=10mA IB=0
VCEsat Collector-emitter saturation voltage IC=1A IB=0.1A
VBE
Base-emitter on voltage
IC=1A ; VCE=2V
ICBO
Collector cut-off current
VCB=120V; IE=0
ICEO
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
hFE-3
DC current gain
VCE=120V; IB=0
VEB=5V; IC=0
IC=0.1A ; VCE=2V
IC=2A ; VCE=2V
IC=3A ; VCE=2V
hFE-4
DC current gain
IC=4A ; VCE=2V
fT
Transition frequency
IC=0.5A;VCE=10V;f=10MHz
MIN TYP. MAX UNIT
120
V
0.5
V
1.0
V
10
µA
0.1
mA
10
µA
40
40
40
20
30
MHz
2