MJE13004 Datasheet, PDF (2/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(4A,300-400V,75W)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
MJE13004
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=10mA ;IB=0
VCE_(sat)-1 Collector-emitter saturation voltage IC=1A; IB=0.2A
VCE_(sat)-2 Collector-emitter saturation voltage IC=2A; IB=0.5A
VCE_(sat)-3 Collector-emitter saturation voltage IC=4A;IB=1A
VBE_(sat)-1 Base-emitter saturation voltage
IC=1A; IB=0.2A
VBE_(sat)-2 Base-emitter saturation voltage
ICEV
Collector cut-off current
IEBO
Emitter cut-off current
IC=2A ;IB=0.5A
VCEV=600V; VBE=1.5V
TC=100
VEB=9V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=2A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=10V;f=1MHz
COB
Collector outoput capacitance
IE=0; f=1MHz ; VCB=10V
Switching times
td
Delay time
tr
Rise time
ts
Storage time
tf
Fall time
VCC=125V ,IC=2A
IB1=-IB2=0.4A
tp=25µs;duty cycleD1%
MIN TYP. MAX UNIT
300
V
0.5
V
0.6
V
1.0
V
1.2
V
1.6
V
1.0
5.0
mA
1.0 mA
10
60
8
40
4
MHz
65
pF
0.1
µs
0.7
µs
4.0
µs
0.9
µs
2