D44H11 Datasheet, PDF (2/5 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=10mA IB=0,
VCEsat Collector-emitter saturation voltage IC=8A; IB=0.4A
VBEsat
Base-emitter saturation voltage
IC=8A ;IB=0.8A
ICES
Collector cut-off current
VCE=80V; VBE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=2A ; VCE=1V
hFE-2
DC current gain
IC=4A ; VCE=1V
fT
Transition frequency
IC=0.5A ; VCE=10V
Ccb
Collector capacitance
f=1MHz ; VCB=10V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5A IB1=- IB2=0.5A
Product Specification
D44H11
MIN TYP. MAX UNIT
80
V
1.0
V
1.5
V
10
µA
0.1
mA
60
40
50
MHz
130
pF
0.3
µs
0.5
µs
0.14
µs
2