BUX48B Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUX48B
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0;
V(BR)EBO Emitter-base breakdown voltage
IE=50mA; IC=0;
VCEsat-1 Collector-emitter saturation voltage IC=6A;IB=1.5A
VCEsat-2 Collector-emitter saturation voltage IC=10A;IB=4A
VBEsat-1 Base-emitter saturation voltage
IC=6A;IB=1.5A
VBEsat-2 Base-emitter saturation voltage
ICES
Collector cut-off current
ICEO
Collector cut-off current
IC=10A;IB=4A
VCE=1200V;VBE=-0
TC=125
VCE=600V;IB=0
IEBO
Emitter cut-off current
VEB=6V;IC=0
hFE
DC current gain
IC=1A ;VCE=5V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=6A;IB1=-IB2=1.5A;
VCC=250V
MIN TYP. MAX UNIT
600
V
7
V
1.5
V
3.0
V
1.5
V
2.0
V
0.5
3.0
mA
1.0
mA
1.0
mA
15
50
0.5
1.0
µs
1.5
3.0
µs
0.2
0.7
µs
2