BUX11 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUX11
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=50mA; IC=0
VCEsat-1 Collector-emitter saturation voltage IC=6 A;IB=0.6A
VCEsat-2 Collector-emitter saturation voltage IC=12 A;IB=1.5 A
VBEsat
ICEX
ICEO
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
IC=12 A;IB=1.5 A
VCE=250V;VBE=-1.5V
TC=125
VCE=160V;IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=6A ; VCE=2V
hFE-2
DC current gain
IC=12A ; VCE=4V
fT
Transition frequency
IC=1A ; VCE=15V; f=10MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=12A ;IB1=1.5A
VCC=150V
IC=12A ;IB1=-IB2=1.5A
VCC=150V
MIN TYP. MAX UNIT
200
V
7
V
0.6
V
1.5
V
1.5
V
1.5
6.0
mA
1.5
mA
1.0
mA
20
60
10
8.0
MHz
1.0
µs
1.8
µs
0.4
µs
2