BUX10 Datasheet, PDF (2/3 Pages) STMicroelectronics – HIGH POWER NPN SILICON TRANSISTOR

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUX10
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0
VEBO
Emitter-base breakdown voltage
IE=50mA; IC=0
VCEsat-1 Collector-emitter saturation voltage IC=10 A;IB=1 A
VCEsat-2 Collector-emitter saturation voltage IC=20 A;IB=2 A
VBEsat
ICEX
ICEO
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
IC=20 A;IB=2 A
VCE=160V;VBE=-1.5V
TC=125
VCE=100V;IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=10A ; VCE=2V
hFE-2
DC current gain
IC=20A ; VCE=4V
fT
Transition frequency
IC=1A ; VCE=15V; f=10MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=20A ;IB1=-IB2=2A
VCC=30V
MIN TYP. MAX UNIT
125
V
7
V
0.6
V
1.2
V
2.0
V
1.5
6.0
mA
1.5
mA
1.0
mA
20
60
10
8.0
MHz
0.5
1.5
µs
0.6
1.2
µs
0.15
0.3
µs
2