BUV48 Datasheet, PDF (2/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(15A,400-450V,150W)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUV48 BUV48A
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
BUV48
BUV48A
IC=0.2A ; IB=0; L=25mH
VEBO(BR)
VCEsat-1
VCEsat-2
VBEsat
ICEX
IEBO
Emitter-base breakdown voltage IE=50mA; IC=0
Collector-emitter
saturation voltage
BUV48
BUV48A
IC=10A; IB=2A
TC=100
IC=8A ;IB=1.6A
TC=100
Collector-emitter
saturation voltage
BUV48 IC=15A ;IB=3A
BUV48A IC=12A ;IB=2.4A
Base-emitter
saturation voltage
BUV48
BUV48A
Collector cut-off current
IC=10A; IB=2A
TC=100
IC=8A ;IB=1.6A
TC=100
VCEX=rated VCES; VBE(off)=1.5V
TC=125
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
BUV48 IC=10A ; VCE=5V
BUV48A IC=8A ; VCE=5V
COB
Output capacitance
IE=0 ; VCB=10V,f=1MHz
Switching times resistive load
td
Delay time
tr
Rise time
ts
Storage time
tf
Fall time
for BUV48
IC=10A ;IB1=2A; VCC=300V
VBE(off)=5V
for BUV48A
IC=8A ;IB1=1.6A; VCC=300V
VBE(off)=5V
MIN TYP. MAX UNIT
400
V
450
7
V
1.5
2.0
V
1.5
2.0
5.0
V
1.6
V
0.2
2.0
mA
0.1
mA
8
350
pF
0.1
0.2
µs
0.4
0.7
µs
1.3
2.0
µs
0.2
0.4
µs
2