BUL310 Datasheet, PDF (2/3 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUL310
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0; L=25mH
V(BR)EBO Emitter-base breakdwon voltage
IE=10mA ;IC=0
VCEsat-1 Collector-emitter saturation voltage IC=1A; IB=0.2A
VCEsat-2 Collector-emitter saturation voltage IC=2A ;IB=0.4A
VCEsat-3 Collector-emitter saturation voltage IC=3A ;IB=0.6A
VBEsat-1 Base-emitter saturation voltage
IC=1A; IB=0.2A
VBEsat-2 Base-emitter saturation voltage
IC=2A ;IB=0.4A
VBEsat-3 Base-emitter saturation voltage
ICES
Collector cut-off current
ICEO
Collector cut-off current
IC=3A ;IB=0.6A
VCE=1000V; VBE=0
TC=125
VCE=400V; IB=0
hFE-1
DC current gain
IC=10mA ; VCE=5V
hFE-2
DC current gain
IC=3A ; VCE=2.5V
Switching times inductive load
ts
Storage time
tf
Fall time
IC=2A ;VCL=250V
IB1 =0.4A;VBE(off)=-5V
L=200µH; RBB=0B
MIN TYP. MAX UNIT
500
V
9
V
0.5
V
0.7
V
1.1
V
1.0
V
1.1
V
1.2
V
100
500
µA
250
µA
10
10
1.9
µs
0.16
µs
2