BUH715 Datasheet, PDF (2/3 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUH715
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=10mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=7A ;IB=1.5A
VBEsat
Base-emitter saturation voltage
ICES
Collector cut-off current
IEBO
Emitter cut-off current
IC=7A ;IB=1.5A
VCE=1500V; VBE=0
Tj=125
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=7A ; VCE=5V
Switching times
ts
Storage time
tf
Fall time
IC=7A;IB1=1.5A;IB2=3.5A;
VCC=400V
MIN TYP. MAX UNIT
700
V
10
V
1.5
V
1.3
V
1
2
mA
100
µA
10
8
16
2.1
3.1
µs
140
210
ns
2